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Светодиодный фотодиод/

Double photon window photodiode

Absolute Maximum Ratings at TA = 25℃

Parameter	Symbol	Rating	Unit	Notice
Reverse Voltage	VR	50	v
Power Dissipation	Pd	125	mW
Lead Soldering Temperature	Tsol	260	℃	4mm from mold body less than 5 seconds
Рабочая температура	Topr	-25 ~+85	℃
Температура хранения	Tstg	-40 ~ +85	℃
Photosensitive area	PA	2 areas 1.8*0.4	mm2

Electronic Optical Characteristics : (Ta=25℃)

PARAMETER	TEST CONDITION	SYMBOL	MIN.	TYP.	MAX.	UNIT
Breakdown voltage	IR = 100 μA, E = 0	V(BR)	-	50	-	V
Forward voltage	IF = 50 mA	VF	-	1	1.3	V
Reverse dark current	VR = 10 V, E = 0	Iro	-	2	5	nA
Diode capacitance	VR = 0 V, f = 1 MHz, E = 0	CD	-	15	30	pF
Open circuit voltage	Ee = 1 mW/cm2 , λ = 950 нм	VOC	-	300	-	mV
Temperature coefficient of VOC	Ee = 1 mW/cm2 , λ = 950 нм	TKVOC	-	-2.2	-	mV/K
Short circuit current	Ee = 1 mW/cm2 , λ = 950 нм	Ik	-	10	-	μA
Temperature coefficient of Ik	Ee = 1 mW/cm2 , λ = 950 нм	TK Ik	-	0.1	-	%/K
Reverse light current	Ee = 1mW/cm2, λ= 950nm, VR=5 V	Ira	25	35	-	μA
Angle of half sensitivity		φ	-	± 60	-	deg
Wavelength of peak sensitivity		λp	-	940	-	нм
Range of spectral bandwidth		λ0. 1	-	300 to 1100	-	нм
Noise equivalent power	VR = 10 V, λ = 950 нм	NEP	-	2 x 10-14	-	W/√Hz
Rise time	VR = 10V, RL = 1 kΩ , λ = 820nm	tr	-	30	-	ns
Fall time	VR = 10V, RL = 1 kΩ , λ = 820nm	t f	-	30	-	ns
Shunt resistor	VR = 10mV	Rsh		0.5	10	GΩ
Photosensitivity	@560nm			0.37
	@633nm	PH		0.44		A/W
	@720nm			0.52