포토다이오드 LED/

Double photon window photodiode

Absolute Maximum Ratings at TA = 25℃

Parameter	Symbol	Rating	Unit	Notice
Reverse Voltage	V아르 자형	50	v
Power Dissipation	Pd	125	mW
Lead Soldering Temperature	티sol	260	℃	4mm from mold body less than 5 seconds
작동 온도	티opr	-25 ~+85	℃
Storage Temperature	티stg	-40 ~ +85	℃
Photosensitive area	PA	2 areas 1.8*0.4	mm2

Electronic Optical Characteristics : (Ta=25℃)

PARAMETER	TEST CONDITION	SYMBOL	MIN.	TYP.	MAX.	UNIT
Breakdown voltage	IR = 100 μA, E = 0	V(BR)	–	50	–	V
Forward voltage	IF = 50 mA	VF	–	1	1.3	V
Reverse dark current	VR = 10 V, E = 0	Iro	–	2	5	nA
Diode capacitance	VR = 0 V, f = 1 MHz, E = 0	CD	–	15	30	pF
Open circuit voltage	Ee = 1 mW/cm2 , λ = 950 나마	VOC	–	300	–	mV
Temperature coefficient of VOC	Ee = 1 mW/cm2 , λ = 950 나마	TKVOC	–	-2.2	–	mV/K
Short circuit current	Ee = 1 mW/cm2 , λ = 950 나마	Ik	–	10	–	μA
Temperature coefficient of Ik	Ee = 1 mW/cm2 , λ = 950 나마	TK Ik	–	0.1	–	%/K
Reverse light current	Ee = 1mW/cm2, λ= 950nm, VR=5 V	Ira	25	35	–	μA
Angle of half sensitivity		φ	–	± 60	–	deg
Wavelength of peak sensitivity		λp	–	940	–	나마
Range of spectral bandwidth		λ0. 1	–	300 to 1100	–	나마
Noise equivalent power	VR = 10 V, λ = 950 나마	NEP	–	2 x 10-14	–	W/√Hz
Rise time	VR = 10V, RL = 1 kΩ , λ = 820nm	tr	–	30	–	ns
Fall time	VR = 10V, RL = 1 kΩ , λ = 820nm	t f	–	30	–	ns
Shunt resistor	VR = 10mV	Rsh		0.5	10	GΩ
Photosensitivity	@560nm			0.37
	@633nm	PH		0.44		A/W
	@720nm			0.52